
EMICON SA-HIPIMS System
The EMICON SA-HIPIMS system records voltage and current waveforms in pulsed (HIPIMS) plasma processes with high temporal resolution in addition to spectral data measurement. This unique combination of data acquisition allows the independent control of ion density and gas composition. In reactive processes, this opens the door of adjusting stoichiometric and morphological layer properties separately.
APPLICATIONS
TECHNICAL DATA
Analog pulse inputs: | ± 1 V (2x) |
Sampling rate: | 40 MHz |
Pulse trigger inputs: | analog ± 5V (1x), optical (2x) |
Spectrometer channels: | 1-8 |
Analog control outputs: | 0 – 10 Volt (4/8) |
Connection: | LAN (TCP/IP) |
Supported fieldbus types: | Profibus, Profinet, EtherCAT, EtherNET/IP, OPC-UA |
FEATURES
EMICON SA-HIPIMS System
The EMICON SA-HIPIMS system is an extension of the EMICON SA system with the unique capability to continuously acquire the electrical pulse data in parallel to the spectroscopic measurement and to use it in combination with the spectroscopic data for process control.
By measuring pulse shapes with a time resolution of 25 ns, the pulse form and pulse values of both current and voltage signal can be accurately determined at any time and passed on for processing. This allows the detection of changes in pulse shape, e.g. during the transition from metallic to reactive sputtering. Synchronization of pulse and spectral data recording with the plasma pulse is performed via the integrated trigger input.
Combining the spectroscopic and electrical process data in one system allows simultaneous control of ion density and reactive gas flow, e.g. in a reactive HIPIMS process. Thus, the EMICON SA-HIPIMS system offers the unique possibility to adjust selectively and independently both the morphological properties (e.g. density and voltage) and the stoichiometry of the layer to be produced in a pulsed production process in a single process control system.
Another application is the compensation of target erosion in HIPIMS processes. Erosion of the target changes the magnetic field on the target surface, which has a dramatic effect on the peak current and ion density. By detecting the peak current, this effect can be compensated and a reproducible layer quality can be guaranteed over the entire target lifetime.